The Temperature Dependence of Electrical Transport Properties in Indium Doped Bismuth

Abstract

Measurements were made on the electrical resistivity at zero magnetic field, magnetoresistivity and Hall coefficient of bismuth alloys containing small amounts of indium as function of temperature in the range 100 - 300K for different magnetic field strengths. The Hall coefficient is observed to be negative in all the cases. Resistivity increases with temperature as it does in metals. The values of the magnetoresistivity and Hall coefficient strongly vary with the magnetic field strength. This is a consequence of the particular band structure which allows the presence of different kinds charge carrier with high and strongly anisotropic mobilities.