Comparison of Modification of Photovoltaic Surface Structure between Gallium Arsenide and Silicon Solar Cells Using Silvaco Software

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Saifuddin Muhammad Jalil
Muhammad Sayuti
Selamat Meliala
Rosdiana .
Muhammad Sadli

Abstract

The simulation modeling of surface structure with 1x1017 ion / cm2 of phosphorus doping content using SILVACO software on photovoltaic made from Gallium Arsenide and Silicon has been conducted. Comparison of modelling simulation of these two different types of materials is aimed at obtaining a high degree of efficiency in photovoltaic devices. Both of these modellings need to be compared in order to obtain comparative accuracy to achieve a final conclusion on photovoltaics to determine the highest level of efficiency in the comparison of solar cells made from Gallium Arsenide with solar cells made from silicon. This comparison will produce the output in the form of the best structural model and material type as photovoltaic. The lighting simulation has been selected at an angle of 900 againstboth types of photovoltaic device materials in the four surface structure models performed to obtain the best level of light absorption efficiency. The results show that for photovoltaic made from silicon, the highest solar cell simulation current value is in the four-sidedstructure model (5.71636E-09 Ampere) and V-trench structure with current value of 4.53455E-09 Ampere. The highest absorption efficiency is in the four-sided and V-trenchstructure which are 4.05E-10% and 3.17E-10%, respectively. For Gallium Arsenide solar cell, the best solar cell simulation is on the V structure model (Isc=3.57520E-09Ampere) and semi-spherewith its current value of 3.58372E-09 Ampere. The highest absorption efficiency is in the V-trenchsurface structure (4.61E-10%). Structural modeling for the two different types of materials at 900 incident light beam angle iindicates that for silicon materials, the best solar cell device structure is the four-sided and for the solar cells made from Gallium Arsenide, the structure of the device that has the best efficiency is the V-trench structure. Therefore, based on the types of material, then the type of the structure can be different to obtain the maximum absorption of light and efficiency

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How to Cite
Jalil, S. M., Sayuti, M., Meliala, S., ., R., & Sadli, M. (2018). Comparison of Modification of Photovoltaic Surface Structure between Gallium Arsenide and Silicon Solar Cells Using Silvaco Software. The International Journal of Science & Technoledge, 6(8). Retrieved from http://internationaljournalcorner.com/index.php/theijst/article/view/132044