Predictive simulation of Triple-Material Cylindrical Gate-All-Around (TM-CGAA) MOSFETs
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Abstract
In this paper, a triple-material cylindrical gate-all-around(TM-CGAA) MOSFET is proposed and an analysis of its natural length based on center potential is presented by means of 3D TCAD simulations. This paper provides contrast between the estimation of the natural length using surface potential and the use of center-potential based natural length formulation for an accurate subthreshold analysis. The effects on the threshold voltage and DIBL due to the device parameters like the cylinder diameter, oxide thickness, gate length ratio, etc., are also examined.
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How to Cite
Kumari, V., Ravish, A., & Babbar, I. (2014). Predictive simulation of Triple-Material Cylindrical Gate-All-Around (TM-CGAA) MOSFETs. The International Journal of Science & Technoledge, 2(3). Retrieved from http://internationaljournalcorner.com/index.php/theijst/article/view/138559