An Electrical and Structural Studies of Multilayer of Cds, Cdte, Cdse and Znse Thin Film Deposited by Thermal Evaporation Method

Abstract

Group II-VI materials of periodic table are very suitable for electronics and optoelectronics application. A multilayer thin film is prepared on a chemically cleaned glass substrate by depositing CdS, CdTe, CdSe and ZnSe one after another using Thermal Evaporation Method. The vacuum inside thin film coating unit is maintained at 10^-6mbar. The electrical properties of this multilayered thin film have been investigated. The crystal structure and lattice parameter of individual and multilayered film are determined by X-ray diffractograms. The surface morphology of individual film was investigated by SEM analysis.